Influence of High-Pressure Annealing on Memory Properties...

IEEE Electron Device Letters 2019 / 7 Vol. 40; Iss. 7

Influence of High-Pressure Annealing on Memory Properties of Hf 0.5 Zr 0.5 O 2 Based 1T-FeRAM

Yoon, Jae Seok, Tewari, Amit, Shin, Changhwan, Jeon, Sanghun
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Volume:
40
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2019.2918797
Date:
July, 2019
File:
PDF, 970 KB
english, 2019
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