Volume 40; Issue 7

IEEE Electron Device Letters

Volume 40; Issue 7

1

Efficient Hole Injection of MoO x -Doped Organic Layer for Printable Red Quantum Dot Light-Emitting Diodes

Zhu, Yangbin, Hu, Hailong, Liu, Yang, Zheng, Xiaojing, Ju, Songman, Lin, Wanzhen, Guo, Tailiang, Li, Fushan

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 1.39 MB

english, 2019

2

A Memristor-Based In-Memory Computing Network for Hamming Code Error Correction

Sun, Xinhao, Zhang, Teng, Cheng, Caidie, Yan, Xiaoqin, Cai, Yimao, Yang, Yuchao, Huang, Ru

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 1.27 MB

english, 2019

3

Physically Transient True Random Number Generators Based on Paired Threshold Switches Enabling Monte Carlo Method Applications

Dang, Bingjie, Sun, Jing, Zhang, Teng, Wang, Saisai, Zhao, Mo, Liu, Keqin, Xu, Liying, Zhu, Jiadi, Cheng, Caidie, Bao, Lin, Yang, Yuchao, Wang, Hong, Hao, Yue, Huang, Ru

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 761 KB

english, 2019

4

Impact of Thickness Control of Hf 0.5 Zr 0.5 O 2 Films for the Metal–Ferroelectric–Insulator–Semiconductor Capacitors

Min, Dae-Hong, Kang, Seung Youl, Moon, Seung-Eon, Yoon, Sung-Min

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 491 KB

english, 2019

5

Influence of High-Pressure Annealing on Memory Properties of Hf 0.5 Zr 0.5 O 2 Based 1T-FeRAM

Yoon, Jae Seok, Tewari, Amit, Shin, Changhwan, Jeon, Sanghun

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 970 KB

english, 2019

6

On the Dynamic Performance of Laterally Gated Transistors

Samizadeh Nikoo, Mohammad, Santoruvo, Giovanni, Erine, Catherine, Jafari, Armin, Matioli, Elison

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 1.15 MB

english, 2019

7

Improving Electrical Performance of Few-Layer MoS 2 FETs via Microwave Annealing

Yang, Hui, Li, Chen, Yue, Lei, Wen, Chenyu, Zhang, Junkai, Wu, Dongping

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 1.59 MB

english, 2019

8

Nanoelectromechanical Switches by Controlled Switchable Cracking

Luo, Qiang, Guo, Zhe, Huang, Houbing, Zou, Qiming, Jiang, Xiangwei, Zhang, Shuai, Wang, Hongjuan, Song, Min, Zhang, Bao, Chen, Hong, Gu, Haoshuang, Han, Genquan, Yang, Xiaofei, Zou, Xuecheng, Wang, Ka

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 911 KB

english, 2019

9

Flexible Memristive Device Based on WSe 2 Quantum Dots Sandwiched Between Two Poly (Methyl Methacrylate) Layers

Perumalveeramalai, Chandrasekar, Li, Fushan, Guo, Tailiang, Kim, Tae Whan

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 1.86 MB

english, 2019

10

Fabrication of a 650V Superjunction MOSFET With Built-in MOS-Channel Diode for Fast Reverse Recovery

Ye, Zhi-Yuan, Liu, Lei, Yao, Yao, Lin, Min-Zhi, Wang, Peng-Fei

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 1.15 MB

english, 2019

11

Fluorine-Implanted Termination for Vertical GaN Schottky Rectifier With High Blocking Voltage and Low Forward Voltage Drop

Han, Shaowen, Yang, Shu, Sheng, Kuang

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 1.14 MB

english, 2019

12

A Novel High Voltage Ultra-Thin SOI-LDMOS With Sectional Linearly Doped Drift Region

Zhang, Wentong, Li, Lu, Qiao, Ming, Zhan, Zhenya, Cheng, Shikang, Zhang, Sen, He, Boyong, Luo, Xiaorong, Li, Zhaoji, Zhang, Bo

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 1.19 MB

english, 2019

13

$\beta$ -Ga 2 O 3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

Xia, Zhanbo, Xue, Hao, Joishi, Chandan, Mcglone, Joe, Kalarickal, Nidhin Kurian, Sohel, Shahadat H., Brenner, Mark, Arehart, Aaron, Ringel, Steven, Lodha, Saurabh, Lu, Wu, Rajan, Siddharth

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 1.19 MB

english, 2019

14

Electrical Stability Analysis of Dynamic Logic Using Amorphous Indium–Gallium–Zinc-Oxide TFTs

Kim, Yong-Duck, Kim, Jong-Seok, Lee, Jong-Il, Han, Ki-Lim, Kim, Beom-Su, Park, Jin-Seong, Choi, Byong-Deok

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 1.06 MB

english, 2019

15

Improving Electrical Performance of Few-Layer MoS 2 FETs via Microwave Annealing

Yang, Hui, Li, Chen, Yue, Lei, Wen, Chenyu, Zhang, Junkai, Wu, Dongping

Journal:

IEEE Electron Device Letters

Year:

2019

File:

PDF, 1.59 MB

2019

16

Nanoelectromechanical Switches by Controlled Switchable Cracking

Luo, Qiang, Guo, Zhe, Huang, Houbing, Zou, Qiming, Jiang, Xiangwei, Zhang, Shuai, Wang, Hongjuan, Song, Min, Zhang, Bao, Chen, Hong, Gu, Haoshuang, Han, Genquan, Yang, Xiaofei, Zou, Xuecheng, Wang, Ka

Journal:

IEEE Electron Device Letters

Year:

2019

File:

PDF, 911 KB

2019

17

Flexible Memristive Device Based on WSe 2 Quantum Dots Sandwiched Between Two Poly (Methyl Methacrylate) Layers

Perumalveeramalai, Chandrasekar, Li, Fushan, Guo, Tailiang, Kim, Tae Whan

Journal:

IEEE Electron Device Letters

Year:

2019

File:

PDF, 1.86 MB

2019

18

Silicon-Based Micro Calorimeter With Single Thermocouple Structure for Thermal Characterization

Wang, Zhuqing, Kimura, Mitsuteru, Toda, Masaya, Ono, Takahito

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 678 KB

english, 2019

19

Schmitt Triggers With Adjustable Hysteresis Window Based on Indium–Tungsten-Oxide Electric-Double-Layer TFTs

Gao, Ya, Wang, Xiangyu, Luo, Jie, Liu, Zehua, Wan, Qing

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 699 KB

english, 2019

20

Fabrication of a 650V Superjunction MOSFET With Built-in MOS-Channel Diode for Fast Reverse Recovery

Ye, Zhi-Yuan, Liu, Lei, Yao, Yao, Lin, Min-Zhi, Wang, Peng-Fei

Journal:

IEEE Electron Device Letters

Year:

2019

File:

PDF, 1.15 MB

2019

21

Fluorine-Implanted Termination for Vertical GaN Schottky Rectifier With High Blocking Voltage and Low Forward Voltage Drop

Han, Shaowen, Yang, Shu, Sheng, Kuang

Journal:

IEEE Electron Device Letters

Year:

2019

File:

PDF, 1.14 MB

2019

22

A Novel High Voltage Ultra-Thin SOI-LDMOS With Sectional Linearly Doped Drift Region

Zhang, Wentong, Li, Lu, Qiao, Ming, Zhan, Zhenya, Cheng, Shikang, Zhang, Sen, He, Boyong, Luo, Xiaorong, Li, Zhaoji, Zhang, Bo

Journal:

IEEE Electron Device Letters

Year:

2019

File:

PDF, 1.19 MB

2019

23

$\beta$ -Ga 2 O 3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

Xia, Zhanbo, Xue, Hao, Joishi, Chandan, Mcglone, Joe, Kalarickal, Nidhin Kurian, Sohel, Shahadat H., Brenner, Mark, Arehart, Aaron, Ringel, Steven, Lodha, Saurabh, Lu, Wu, Rajan, Siddharth

Journal:

IEEE Electron Device Letters

Year:

2019

File:

PDF, 1.19 MB

2019

24

Electrical Stability Analysis of Dynamic Logic Using Amorphous Indium–Gallium–Zinc-Oxide TFTs

Kim, Yong-Duck, Kim, Jong-Seok, Lee, Jong-Il, Han, Ki-Lim, Kim, Beom-Su, Park, Jin-Seong, Choi, Byong-Deok

Journal:

IEEE Electron Device Letters

Year:

2019

File:

PDF, 1.06 MB

2019

25

The Super-Lattice Castellated Field-Effect Transistor: A High-Power, High-Performance RF Amplifier

Chang, Josephine, Afroz, Shamima, Nagamatsu, Ken, Frey, Kevin, Saluru, Sarat, Merkel, Jordan, Taylor, Sara, Stewart, Eric, Gupta, Shalini, Howell, Robert

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 1.14 MB

english, 2019

26

Improving Post-Cycling Low Resistance State Retention in Resistive RAM With Combined Oxygen Vacancy and Copper Filament

Radhakrishnan, Janaki, Belmonte, Attilio, Clima, Sergiu, Redolfi, Augusto, Houssa, Michel, Kar, Gouri Sankar, Goux, Ludovic

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 1.12 MB

english, 2019

27

Superjunction MOSFET With Dual Built-In Schottky Diodes for Fast Reverse Recovery: A Numerical Simulation Study

Wei, Jin, Zhang, Meng, Jiang, Huaping, Zhou, Xianda, Li, Baikui, Chen, Kevin J.

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 1.10 MB

english, 2019

28

Photovoltaic Three-Dimensional Diamond UV Photodetector With Low Dark Current and Fast Response Speed Fabricated by Bottom-Up Method

Liu, Zhangcheng, Zhao, Dan, Min, Tai, Wang, Juan, Chen, Genqiang, Wang, Hong-Xing

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 722 KB

english, 2019

29

IEEE Electron Device Letters

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 174 KB

english, 2019

30

IEEE Electron Device Letters information for authors

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 157 KB

english, 2019

31

EDS Meetings Calendar

Journal:

IEEE Electron Device Letters

Year:

2019

File:

PDF, 853 KB

2019

32

Call for Papers - T-ED special issue "Memory Devices and Technologies for the Next Decade

Journal:

IEEE Electron Device Letters

Year:

2019

File:

PDF, 1.02 MB

2019

33

Ultra Wide Band Gap Semiconductors for Power Control and Conversion

Journal:

IEEE Electron Device Letters

Year:

2019

File:

PDF, 1.39 MB

2019

34

Analysis and Experimental Quantification of 1.2-kV 4H-SiC Split-Gate Octagonal MOSFET

Han, Kijeong, Baliga, B. J.

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 948 KB

english, 2019

35

0.6V Threshold Voltage Thin Film Transistors With Solution Processable Indium Oxide (In 2 O 3 ) Channel and Anodized High-$\kappa$ Al 2 O 3 Dielectric

Bhalerao, Sagar R., Lupo, Donald, Zangiabadi, Amirali, Kymissis, Ioannis, Leppaniemi, Jaakko, Alastalo, Ari, Berger, Paul R.

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 896 KB

english, 2019

36

Phonon Engineering to Modify Acoustic Phonon Velocity in Hexagonal Layered Superlattices

Mohamed, Ahmed, Dutta, Mitra, Stroscio, Michael

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 479 KB

english, 2019

37

Blank page

Journal:

IEEE Electron Device Letters

Year:

2019

File:

PDF, 5.96 MB

2019

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