Fluorine-Implanted Termination for Vertical GaN Schottky Rectifier With High Blocking Voltage and Low Forward Voltage Drop
Han, Shaowen, Yang, Shu, Sheng, KuangVolume:
40
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2019.2915578
Date:
July, 2019
File:
PDF, 1.14 MB
english, 2019