Fluorine-Implanted Termination for Vertical GaN Schottky...

IEEE Electron Device Letters 2019 / 7 Vol. 40; Iss. 7

Fluorine-Implanted Termination for Vertical GaN Schottky Rectifier With High Blocking Voltage and Low Forward Voltage Drop

Han, Shaowen, Yang, Shu, Sheng, Kuang
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Volume:
40
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2019.2915578
Date:
July, 2019
File:
PDF, 1.14 MB
2019
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