A Novel High Voltage Ultra-Thin SOI-LDMOS With Sectional...

IEEE Electron Device Letters 2019 / 7 Vol. 40; Iss. 7

A Novel High Voltage Ultra-Thin SOI-LDMOS With Sectional Linearly Doped Drift Region

Zhang, Wentong, Li, Lu, Qiao, Ming, Zhan, Zhenya, Cheng, Shikang, Zhang, Sen, He, Boyong, Luo, Xiaorong, Li, Zhaoji, Zhang, Bo
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Volume:
40
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2019.2919074
Date:
July, 2019
File:
PDF, 1.19 MB
2019
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