Improving Post-Cycling Low Resistance State Retention in...

IEEE Electron Device Letters 2019 / 7 Vol. 40; Iss. 7

Improving Post-Cycling Low Resistance State Retention in Resistive RAM With Combined Oxygen Vacancy and Copper Filament

Radhakrishnan, Janaki, Belmonte, Attilio, Clima, Sergiu, Redolfi, Augusto, Houssa, Michel, Kar, Gouri Sankar, Goux, Ludovic
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Volume:
40
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2019.2917553
Date:
July, 2019
File:
PDF, 1.12 MB
english, 2019
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