Analysis and Experimental Quantification of 1.2-kV 4H-SiC...

IEEE Electron Device Letters 2019 / 7 Vol. 40; Iss. 7

Analysis and Experimental Quantification of 1.2-kV 4H-SiC Split-Gate Octagonal MOSFET

Han, Kijeong, Baliga, B. J.
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Volume:
40
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2019.2917637
Date:
July, 2019
File:
PDF, 948 KB
english, 2019
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