Impact of Fin Width on Tri-Gate GaN MOSHEMTs

IEEE Transactions on Electron Devices 2019 / 9 Vol. 66; Iss. 9

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

Ma, Jun, Santoruvo, Giovanni, Nela, Luca, Wang, Taifang, Matioli, Elison
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Volume:
66
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2925859
Date:
September, 2019
File:
PDF, 1.55 MB
english, 2019
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