Volume 66; Issue 9

IEEE Transactions on Electron Devices

Volume 66; Issue 9

1

Fabrication, Characterization, and Gas Sensing Performance of Pd, RGO, and MnO 2 Nanoflowers-Based Ternary Junction Device

Ghosal, Sanghamitra, Bhattacharyya, Partha

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 2.33 MB

english, 2019

2

ZnO Nanorod Humidity Sensor and Dye-Sensitized Solar Cells as a Self-Powered Device

Young, Sheng-Joue, Yuan, Kuo-Wei

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.63 MB

english, 2019

3

Modeling of Organic Metal–Insulator– Semiconductor Capacitor

Manda, Prashanth Kumar, Karunakaran, Logesh, Thirumala, Sandeep, Chakravorty, Anjan, Dutta, Soumya

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.52 MB

english, 2019

4

DIMOHA: A Time-Domain Algorithm for Traveling-Wave Tube Simulations

Minenna, Damien F. G., Elskens, Yves, Andre, Frederic, Poye, Alexandre, Puech, Jerome, Doveil, Fabrice

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 864 KB

english, 2019

5

Eco-Friendly Fully Water-Driven Metal–Oxide Thin Films and Their Applications in Transistors and Logic Circuits

Zhang, Chong, He, Gang, Yang, Bing, Xia, Yufeng, Zhang, Yongchun

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.56 MB

english, 2019

6

High-Performance Back-Channel-Etch Thin-Film Transistors With Zinc Tin Oxide as Barrier Layer via Spray Coating

Li, Min, Huang, Dongchen, Li, Meiling, Zhang, Wei, Xu, Hua, Zou, Jianhua, Tao, Hong, Wang, Lei, Peng, Junbiao, Xu, Miao

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 2.87 MB

english, 2019

7

Silicon Carbide Bipolar Analog Circuits for Extreme Temperature Signal Conditioning

Roy, Sajib, Rashid, Arman Ur, Abbasi, Affan, Murphree, Robert C., Hossain, MD Maksudul, Faruque, Asif, Metreveli, Alex, Zetterling, Carl-Mikael, Fraley, John, Sparkman, Brett, Mantooth, H. Alan

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.88 MB

english, 2019

8

Low-Loss Characteristics of Metal-Foil-Based Passive Components by Surface-Activated Bonding Technologies

Matsuura, Keita, Liang, Jianbo, Maezawa, Koichi, Shigekawa, Naoteru

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.74 MB

english, 2019

9

Improvements in the Electrical Performance of IC MOSFET Components Using Diamond Layout Style Versus Traditional Rectangular Layout Style Calculated by Conformal Mapping

Barri, D., Vacula, P., Kote, V., Jakovenko, J., Voves, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 2.57 MB

english, 2019

10

Reverse-Bias Stress-Induced Electrical Parameters Instability in 4H-SiC JBS Diodes Terminated Nonequidistance FLRs

Song, Qingwen, Yuan, Hao, Sun, Qiujie, Han, Chao, Tang, Xiaoyan, Zhang, Yimeng, Yuan, Lei, Yang, Shuai, Zhang, Yuming

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.95 MB

english, 2019

11

New Amorphous In–Ga–Zn–O Thin-Film Transistor-Based Optical Pixel Sensor for Optical Input Signal With Short Wavelength

Wu, Chia-En, Ide, Keisuke, Katase, Takayoshi, Hiramatsu, Hidenori, Hosono, Hideo, Lin, Chih-Lung, Kamiya, Toshio

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 2.04 MB

english, 2019

12

Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion—Part II: Compact Modeling

Wang, Wei, Laudato, Mario, Ambrosi, Elia, Bricalli, Alessandro, Covi, Erika, Lin, Yu-Hsuan, Ielmini, Daniele

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.59 MB

english, 2019

13

Investigation of Dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ Under Switching Operation in Schottky-Type p-GaN Gate HEMTs

Wang, Yuru, Wei, Jin, Yang, Song, Lei, Jiacheng, Hua, Mengyuan, Chen, Kevin J.

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 2.65 MB

2019

14

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

Ma, Jun, Santoruvo, Giovanni, Nela, Luca, Wang, Taifang, Matioli, Elison

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.55 MB

english, 2019

15

Reproducing GaN HEMT Kink Effect by Simulating Field-Enhanced Barrier Defect Ionization

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.29 MB

english, 2019

16

Energy Bandpass Filtering in Superlattice Phase Change Memories

Bahl, Jyotsna, Priyadarshi, Pankaj, Muralidharan, Bhaskaran

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.42 MB

english, 2019

17

Comprehensive Physics of Third Quadrant Characteristics for Accumulation- and Inversion-Channel 1.2-kV 4H-SiC MOSFETs

Han, Kijeong, Baliga, B. J.

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.99 MB

english, 2019

18

Low-Noise Schottky Junction Trigate Silicon Nanowire Field-Effect Transistor for Charge Sensing

Chen, Xi, Chen, Si, Zhang, Shi-Li, Solomon, Paul, Zhang, Zhen

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 5.86 MB

english, 2019

19

Impact of Gate–Source Overlap on the Device/Circuit Analog Performance of Line TFETs

Acharya, Abhishek, Solanki, A. B., Glass, S., Zhao, Q. T., Anand, Bulusu

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.27 MB

english, 2019

20

A Vertical Superjunction MOSFET With n-Si and p-3C-SiC Pillars

Huang, Mingmin, Deng, Youqi, Lai, Li, Yang, Zhimei, Gao, Bo, Gong, Min

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 2.14 MB

english, 2019

21

Mode Control Analysis and Large-Signal Design of a High-Power Terahertz Extended Interaction Oscillator

Bahman Soltani, Hooman, Abiri, Habibollah

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 5.81 MB

english, 2019

22

Performance and Reliability Comparison of ZnO and IGZO Thin-Film Transistors and Inverters Fabricated at a Maximum Process Temperature of 115 °C

Rodriguez-Davila, R. A., Mejia, I., Chapman, R. A., Young, C. D., Quevedo-Lopez, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 2.84 MB

english, 2019

23

Bipolar AC Switch for Specific Mains Applications: Design, Realization, and Characterization

Rizk, Hiba, Bourennane, Abdelhakim, Breil, Marie, Laur, Jean-Pierre

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 2.76 MB

english, 2019

24

Room Temperature-Processed a-IGZO Schottky Diode for Rectifying Circuit and Bipolar 1D1R Crossbar Applications

Wu, Quantan, Yang, Guanhua, Lu, Congyan, Xu, Guangwei, Wang, Jiawei, Dang, Bingjie, Gong, Yuxin, Shi, Xuewen, Chuai, Xichen, Lu, Nianduan, Geng, Di, Wang, Hong, Li, Ling, Liu, Ming

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.26 MB

english, 2019

25

Feasibility Study of Wafer-Level Backside Process for InP-Based ICs

Tsutsumi, Takuya, Hamada, Hiroshi, Sano, Kimikazu, Ida, Minoru, Matsuzaki, Hideaki

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.24 MB

english, 2019

26

Temperature-Dependent Contact Resistance to Nonvolatile Memory Materials

Deshmukh, Sanchit, Yalon, Eilam, Lian, Feifei, Schauble, Kirstin E., Xiong, Feng, Karpov, Ilya V., Pop, Eric

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 976 KB

english, 2019

27

Optimized Si-Based Blocked Impurity Band Detector Under Alternative Operational Mode

Zhu, He, Wang, Chao, Wang, Peng, He, Jiale, Hu, Weida

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.38 MB

english, 2019

28

Insight Into Ni/4H-SiC Schottky Barrier Inhomogeneity at Microscale Level

Gao, Meng-Meng, Hu, Ting-Ting, Chen, Zhi-Zhan

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.29 MB

english, 2019

29

Design of a Multistage Depressed Collector for ${W}$ -Band Pulsed Traveling-Wave Tubes

Yang, Jinsheng, Zhang, Xiaoqing, Du, Yinghua, Cai, Jun, Feng, Jinjun

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 2.74 MB

english, 2019

30

Insight into Effects of Oxygen Reservoir Layer and Operation Schemes on Data Retention of HfO 2 -Based RRAM

Cai, Linlin, Chen, Wangyong, Zhao, Yudi, Liu, Xiaoyan, Kang, Jinfeng, Zhang, Xing, Huang, Peng

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.82 MB

english, 2019

31

Characterization of Process-Induced Nonuniformity Using Asymmetric Metal–Insulator–Semiconductor Capacitive Test Structure

Agarwal, Rajesh

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 2.09 MB

english, 2019

32

Call for Papers - T-ED special issue on Memory Devices and Technologies for the Next Decade

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 1.02 MB

2019

33

Table of contents

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 199 KB

english, 2019

34

IEEE Transactions on Electron Devices information for authors

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 118 KB

english, 2019

35

Ultra Wide Band Gap Semiconductors for Power Control and Conversion

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 1.36 MB

2019

36

Together, we are advancing technology

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 454 KB

2019

37

Call for Papers - T-ED special issue on Memory Devices and Technologies for the Next Decade

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 1.02 MB

2019

38

Table of contents

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 199 KB

2019

39

IEEE Transactions on Electron Devices information for authors

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 118 KB

2019

40

Ultra Wide Band Gap Semiconductors for Power Control and Conversion

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 1.36 MB

2019

41

Together, we are advancing technology

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 454 KB

2019

42

Introducing IEEE Collabratec

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 2.01 MB

2019

43

Blank page

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 7.88 MB

2019

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