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Comprehensive Physics of Third Quadrant Characteristics for Accumulation- and Inversion-Channel 1.2-kV 4H-SiC MOSFETs
Han, Kijeong, Baliga, B. J.Volume:
66
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2019.2929733
Date:
September, 2019
File:
PDF, 1.99 MB
english, 2019