Insight into Effects of Oxygen Reservoir Layer and...

IEEE Transactions on Electron Devices 2019 / 9 Vol. 66; Iss. 9

Insight into Effects of Oxygen Reservoir Layer and Operation Schemes on Data Retention of HfO 2 -Based RRAM

Cai, Linlin, Chen, Wangyong, Zhao, Yudi, Liu, Xiaoyan, Kang, Jinfeng, Zhang, Xing, Huang, Peng
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Volume:
66
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2928626
Date:
September, 2019
File:
PDF, 1.82 MB
english, 2019
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