The microstructure and electrical properties of directly...

MRS Internet Journal of Nitride Semiconductor Research 2000 Vol. 5; Iss. S1

The microstructure and electrical properties of directly deposited TiN ohmic contacts to Gallium Nitride.

Ruterana, P., Nouet, G., Kehagias, Th., Komninou, Ph., Karakostas, Th., di Forte Poisson, M.A., Huet, F.
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Volume:
5
Year:
2000
Journal:
MRS Internet Journal of Nitride Semiconductor Research
DOI:
10.1557/s1092578300005226
File:
PDF, 1.67 MB
2000
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