Volume 5; Issue S1

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MRS Internet Journal of Nitride Semiconductor Research
Volume 5; Issue S1

MRS Internet Journal of Nitride Semiconductor Research

Volume 5; Issue S1

1

Deep levels in n-type Schottky and p + -n homojunction GaN diodes

Hierro, A., Kwon, D., Ringel, S. A., Hansen, M., Mishra, U. K., DenBaars, S. P., Speck, J. S.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

Language:

english

File:

PDF, 80 KB

english, 2000

2

AlN Wafers Fabricated by Hydride Vapor Phase Epitaxy

Nikolaev, Andrey, Nikitina, Irina, Zubrilov, Andrey, Mynbaeva, Marina, Melnik, Yuriy, Dmitriev, Vladimir

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

Language:

english

File:

PDF, 1005 KB

english, 2000

3

Properties and Effects of Hydrogen in GaN

Pearton, S.J., Cho, H., Ren, F., Chyi, J.-I., Han, J., Wilson, R.G.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

Language:

english

File:

PDF, 559 KB

english, 2000

4

AlN Wafers Fabricated by Hydride Vapor Phase Epitaxy

Nikolaev, Andrey, Nikitina, Irina, Zubrilov, Andrey, Mynbaeva, Marina, Melnik, Yuriy, Dmitriev, Vladimir

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 1005 KB

2000

5

A Thermodynamic Approach to Ohmic Contact Formation to p-GaN

Liu, Bo, Ahonen, Mikko H., Holloway, Paul H.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

Language:

english

File:

PDF, 73 KB

english, 2000

6

MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

Han, Jung, Figiel, Jeffrey J., Petersen, Gary A., Myers, Samuel M., Crawford, Mary H., Banas, Michael A., Hearne, Sean J.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

Language:

english

File:

PDF, 368 KB

english, 2000

7

Surface Conversion Effects in Plasma-Damaged p-GaN

Cao, X.A., Pearton, S.J., Dang, G.T., Zhang, A.P., Ren, F., Shul, R.J., Zhang, L., Hickman, R., Van Hove, J.M.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

Language:

english

File:

PDF, 183 KB

english, 2000

8

High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays

Brown, J.D., Matthews, J., Harney, S., Boney, J., Schetzina, J.F., Benson, J.D., Dang, K.V., Nohava, Thomas, Yang, Wei, Krishnankutty, Subash

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

Language:

english

File:

PDF, 262 KB

english, 2000

9

Comparison Study of Structural and Optical Properties of In x Ga 1−x N/GaN Quantum Wells with Different In Compositions

Kwon, Yong-Hwan, Gainer, G. H., Bidnyk, S., Cho, Y. H., Song, J. J., Hansen, M., DenBaars, S. P.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 105 KB

2000

10

AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties

Piner, E.L., Keogh, D.M., Flynn, J.S., Redwing, J.M

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

Language:

english

File:

PDF, 53 KB

english, 2000

11

AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties

Piner, E.L., Keogh, D.M., Flynn, J.S., Redwing, J.M

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 53 KB

2000

12

Activation of Beryllium-Implanted GaN by Two-Step Annealing

Sun, Yuejun, Tan, Leng Seow, Chua, Soo Jin, Prakash, Savarimuthu

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

Language:

english

File:

PDF, 73 KB

english, 2000

13

Efficient Acceptor Activation in Al x Ga 1− x N/GaN Doped Superlattices

Goepfert, I. D., Schubert, E. F., Osinsky, A., Norris, P. E.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

Language:

english

File:

PDF, 125 KB

english, 2000

14

Activation of Beryllium-Implanted GaN by Two-Step Annealing

Sun, Yuejun, Tan, Leng Seow, Chua, Soo Jin, Prakash, Savarimuthu

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 73 KB

2000

15

Prism coupling as a non destructive tool for optical characterization of (Al,Ga) nitride compounds

Dogheche, E., Belgacem, B., Remiens, D., Ruterana, P., Omnes, F.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

Language:

english

File:

PDF, 289 KB

english, 2000

16

Simulation of H Behavior in p-GaN(Mg) at Elevated Temperatures

Myers, S. M., Wright, A. F., Petersen, G. A., Seager, C. H., Crawford, M. H., Wampler, W. R., Han, J.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

Language:

english

File:

PDF, 68 KB

english, 2000

17

Wet Etching of Ion-implanted GaN Crystals by AZ-400K Photoresist

Carosella, C.A., Molnar, B., Schiestel, S., Sprague, J.A.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

Language:

english

File:

PDF, 780 KB

english, 2000

18

Growth of InN By MBE

Chen, W.-L., Gunshor, R. L., Han, Jung, Higashimine, K., Otsuka, N.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

Language:

english

File:

PDF, 285 KB

english, 2000

19

High-Temperature Reliability of GaN Electronic Devices

Yoshida, Seikoh, Suzuki, Joe

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

Language:

english

File:

PDF, 169 KB

english, 2000

20

High Temperature Hardness of Bulk Single Crystal GaN

Yonenaga, I., Hoshi, T., Usui, A.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

Language:

english

File:

PDF, 84 KB

english, 2000

21

High Temperature Hardness of Bulk Single Crystal GaN

Yonenaga, I., Hoshi, T., Usui, A.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 84 KB

2000

22

Electrical Measurements in GaN: Point Defects and Dislocations

Look, David C., Fang, Zhaoqiang, Polenta, Laura

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

Language:

english

File:

PDF, 112 KB

english, 2000

23

Dislocation Arrangement in a Thick LEO GaN Film on Sapphire

Dunn, Kathleen A., Babcock, Susan E., Stone, Donald S., Matyi, Richard J., Zhang, Ling, Kuech, Thomas F.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 3.64 MB

2000

24

The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GAN

Gu, Shulin, Zhang, Rong, Sun, Jingxi, Zhang, Ling, Kuech, T. F.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 119 KB

2000

25

Electrical Measurements in GaN: Point Defects and Dislocations

Look, David C., Fang, Zhaoqiang, Polenta, Laura

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 112 KB

2000

26

Preparation and Characterization of Single-crystal Aluminum Nitride Substrates

Schowalter, Leo J., Carlos Rojo, J., Yakolev, Nikolai, Shusterman, Yuriy, Dovidenko, Katherine, Wang, Rungjun, Bhat, Ishwara, Slack, Glen A.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 1.01 MB

2000

27

MBE Growth of Nitride-Arsenide Materials for long Wavelength Opto-electronics

Spruytte, Sylvia G., Coldren, Christopher W., Marshall, Ann F., Larson, Michael C., Harris, James S.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

Language:

english

File:

PDF, 65 KB

english, 2000

28

Structural and Electronic Properties of Line Defects in GaN

Elsner, Joachim, Blumenau, Alexander Th., Frauenheim, Thomas, Jones, Robert, Heggie, Malcolm I.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

Language:

english

File:

PDF, 270 KB

english, 2000

29

Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy

Korotkov, R.Y., Wessels, B.W.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

Language:

english

File:

PDF, 90 KB

english, 2000

30

High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

Nikishin, Sergey A., Faleev, Nikolai N., Antipov, Vladimir G., Francoeur, Sebastien, Peralta, Luis Grave de, Seryogin, George A., Holtz, Mark, Prokofyeva, Tatâyana I., Chu, S. N. G., Zubrilov, Andre

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 214 KB

2000

31

The microstructure and electrical properties of directly deposited TiN ohmic contacts to Gallium Nitride.

Ruterana, P., Nouet, G., Kehagias, Th., Komninou, Ph., Karakostas, Th., di Forte Poisson, M.A., Huet, F.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 1.67 MB

2000

32

Photoluminescence and Cathodoluminescence of GaN doped with Pr

Lozykowski, H. J., Jadwisienczak, W. M., Brown, I.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 209 KB

2000

33

Electrical transport of an AlGaN/GaN two-dimensional electron gas

Saxler, A., Debray, P., Perrin, R., Elhamri, S., Mitchel, W. C., Elsass, C.R., Smorchkova, I.P., Heying, B., Haus, E., Fini, P., Ibbetson, J.P., Keller, S., Petroff, P.M., DenBaars, S.P., Mishra, U.K.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 89 KB

2000

34

Surface activity of magnesium during GaN molecular beam epitaxial growth

Ramachandran, V., Feenstra, R. M., Northrup, J. E., Greve, D. W.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 274 KB

2000

35

High reflectance III-Nitride Bragg reflectors grown by molecular beam epitaxy

Ng, H. M., Moustakas, T. D.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 81 KB

2000

36

Improved Low Resistance Contacts of Ni/Au and Pd/Au to p-Type GaN Using a Cryogenic Treatment

Park, Mi-Ran, Anderson, Wayne A., Park, Seong-Ju

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 293 KB

2000

37

Effect Of AlGaN/GaN Strained Layer Superlattice Period On InGaN MQW Laser Diodes

Hansen, Monica, Abare, Amber C., Kozodoy, Peter, Katona, Thomas M., Craven, Michael D., Speck, Jim S., Mishra, Umesh K., Coldren, Larry A., DenBaars, Steven P.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 530 KB

2000

38

Electrical Properties of Cubic InN And GaN Epitaxial Layers as a Function of Temperature

Fernandez, J.R.L., Chitta, V.A., Abramof, E., Ferreira da Silva, A., Leite, J.R., Tabata, A., As, D.J., Frey, T., Schikora, D., Lischka, K.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 84 KB

2000

39

Co-doping Characteristics of Si and Zn with Mg in P-type GaN

Kim, K.S., Oh, C.S., Han, M.S., Kim, C.S., Yang, G.M., Yang, J.W., Hong, C.-H., Youn, C.J., Lim, K.Y., Lee, H.J.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 92 KB

2000

40

GaN Decomposition in Ammonia

Koleske, D.D., Wickenden, A.E., Henry, R.L.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 187 KB

2000

41

Optical Properties of Manganese Doped Amorphous and Crystalline Aluminum Nitride Films

Caldwell, M.L., Richardson, H.H., Kordesch, M.E.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 197 KB

2000

42

Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect Transistors

Maeda, Narihiko, Saitoh, Tadashi, Tsubaki, Kotaro, Nishida, Toshio, Kobayashi, Naoki

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 72 KB

2000

43

Growth kinetics of GaN thin films grown by OMVPE using single source precursors

Fischer, R. A., Wohlfart, A., Devi, A., Rogge, W.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 195 KB

2000

44

Optical Properties of AlGaN Quantum Well Structures

Hirayama, Hideki, Enomoto, Yasushi, Kinoshita, Atsuhiro, Hirata, Akira, Aoyagi, Yoshinobu

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 155 KB

2000

45

Photoluminescence characterization of Mg implanted GaN

Ronning, C., HofsÃ¤ss, H., StÃ¶tzler, A., Deicher, M., Carlson, E.P., Hartlieb, P.J., Gehrke, T., Rajagopal, P., Davis, R.F.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 80 KB

2000

46

Fabrication of GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE

Miyake, Hideto, Yamaguchi, Motoo, Haino, Masahiro, Motogaito, Atsushi, Hiramatsu, Kazumasa, Nambu, Shingo, Kawaguchi, Yasutoshi, Sawaki, Nobuhiko, Iyechika, Yasushi, Maeda, Takayoshi, Akasaki, Isamu

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 175 KB

2000

47

Highly Chemical Reactive Ion Etching of Gallium Nitride

Karouta, F., Jacobs, B., Moerman, I., Jacobs, K., Weyher, J.L., Porowski, S., Crane, R., Hageman, P.R.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 870 KB

2000

48

TEM Study of Bulk AlN Growth by Physical Vapor Transport

Sarney, W.L., Salamanca-Riba, L., Hossain, T., Zhou, P., Jayatirtha, H.N., Kang, H.H., Vispute, R.D., Spencer, M., Jones, K.A.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

File:

PDF, 390 KB

2000