XPS study of a selective GaN etching process using...

Microelectronic Engineering 2020 / 05 Vol. 228

XPS study of a selective GaN etching process using self-limiting cyclic approach for power devices application

Le Roux, Frédéric, Possémé, Nicolas, Burtin, Pauline, Barnola, Sébastien, Torres, Alphonse
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Volume:
228
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2020.111328
Date:
May, 2020
File:
PDF, 1.26 MB
2020
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