Temperature dependence of bipolar junction transistor...

Microelectronics Reliability 2020 / 10 Vol. 113

Temperature dependence of bipolar junction transistor current-voltage characteristics after low dose rate irradiation

Privat, A., Barnaby, H.J., Tolleson, B.S., Muthuseenu, K., Adell, P.C.
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Volume:
113
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2020.113947
Date:
October, 2020
File:
PDF, 2.96 MB
2020
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