DSL photoetching and near infrared phase contrast...

Journal of Crystal Growth 1990 Vol. 106; Iss. 2-3

DSL photoetching and near infrared phase contrast microscopy on grown-in defects in Si doped LEC GaAs

J.L. Weyher, P.C. Montgomery
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Volume:
106
Year:
1990
Language:
english
Pages:
5
DOI:
10.1016/0022-0248(90)90094-2
File:
PDF, 507 KB
english, 1990
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