Volume 106; Issue 2-3

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Journal of Crystal Growth
Volume 106; Issue 2-3

Journal of Crystal Growth

Volume 106; Issue 2-3

1

Elastic constant matrix required for thermal stress analysis of bulk single crystals during Czochralski growth

N. Miyazaki, S. Hagihara, T. Munakata

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 451 KB

english, 1990

2

Misfit dislocations in GaAs heteroepitaxy on (001) Si

D. Gerthsen, D.K. Biegelsen, F.A. Ponce, J.C. Tramontana

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 946 KB

english, 1990

3

Growth of CdS/ZnS superlattices at low temperature by atomic layer epitaxy

Shin-ichi Ohta, Satoshi Kobayashi, Futao Kaneko, Ko-ichi Kashiro

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 748 KB

english, 1990

4

Kink densities along a crystal surface step at low temperatures and under nonequilibrium conditions

Jingwu Zhang, G.H. Nancollas

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 817 KB

english, 1990

5

Undercooling of acoustically levitated molten drops

K. Ohsaka, E.H. Trinh, M.E. Glicksman

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 522 KB

english, 1990

6

Measurements of concentration profile by diffraction techniques

F. Bedarida, E. Piano, C. Pontiggia

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 322 KB

english, 1990

7

Calculation of unimolecular rate constants for common metalorganic vapor phase epitaxy precursors via RRKM theory

N.I. Buchan, J.M. Jasinski

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 1.48 MB

english, 1990

8

Infrared studies of exchange and pyrolysis reactions in mixtures of trimethylamine alane and trimethylgallium

A.S. Grady, R.D. Markwell, D.K. Russell, A.C. Jones

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 532 KB

english, 1990

9

Growth of low carbon content AlxGa1−xAs by reduced pressure MOVPE using trimethylamine alane

A.C. Jones, S.A. Rushworth

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 408 KB

english, 1990

10

Diamond deposition by chemical vapor transport with hydrogen in a closed system

W. Piekarczyk, R. Messier, R. Roy, C. Engdahl

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 1.37 MB

english, 1990

11

Numerical simulation of the growth of HgCdTe layers by liquid phase epitaxy from Te-rich solutions: The effect of liquid dimensions and mercury loss

J. Sanz-Maudes, J. Sangrador, T. Rodriguez, A. Pernichi, C. Gonzalez

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 942 KB

english, 1990

12

Subcell-matched epitaxy of normal long chain compounds on polyethylene: II. On the (100) plane

Takumi Okihara, Akiyoshi Kawaguchi, Masayoshi Ohara, Ken-ichi Katayama

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 1.53 MB

english, 1990

13

The effect of magnesium ions on the precipitation of calcium phosphates

W. Kibalczyc, J. Christoffersen, M.R. Christoffersen, A. Zielenkiewicz, W. Zielenkiewicz

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 1007 KB

english, 1990

14

The distribution coefficients of Mg2+ ion between CaCO3 polymorphs and solution and the effects on the formation and transformation of CaCO3 in water

Kiyoshi Sawada, Takeshi Ogino, Toshio Suzuki

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 627 KB

english, 1990

15

Growth morphology of titanium nitride whiskers

W. Guo, X.G. Ning, J. Zhu, H.Q. Ye

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 393 KB

english, 1990

16

Rapid access to an updated biological macromolecule crystallization database through artificial intelligence

Alain Roussel, Laurence Serre, Michel Frey, Juan-C. Fontecilla-Camps

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 340 KB

english, 1990

17

Large scale MOCVD growth of GaAs-on-Si by atomic layer epitaxy using initial buffer layers

Norio Hayafuji, Motoharu Miyashita, Hisao Kumabe, Toshio Murotani

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 413 KB

english, 1990

18

On the scaling analysis of the solute boundary layer in idealized growth configurations

J.P. Garandet, T. Duffar, J.J. Favier

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 591 KB

english, 1990

19

Surface tension driven heat, mass, and momentum transport in a two-dimensional float-zone

G.W. Young, A. Chait

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 1.68 MB

english, 1990

20

High resistivity InP layer grown by low temperature liquid phase epitaxy

K. Ohtsuka, T. Ohishi, Y. Abe, H. Sugimoto, T. Matsui

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 321 KB

english, 1990

21

Morphology of synthetic diamonds grown from Na2CO3 solvent-catalyst

Hisao Kanda, Minoru Akaishi, Shinobu Yamaoka

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 398 KB

english, 1990

22

Etch pit study of different crystallographic faces of L-arginine phosphate (LAP)

S.M. Rao, A.K. Batra, C. Cao, R.B. Lal

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 250 KB

english, 1990

23

Double crucible method for the growth of large superconducting YBCO single crystals

Yaoshui Wang, P. Bennema, P. van der Linden

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 287 KB

english, 1990

24

A new procedure for the isolation of large YBCO superconducting single crystals

Yaoshui Wang, L.W.M. Schreurs, P. van der Linden, Yuan Li, P. Bennema

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 231 KB

english, 1990

25

Study of decoration microdefects in lec-grown Si-doped GaAs crystals by selective photoetching and laser scattering tomography

J.L. Weyher, P. Gall, G. Frigerio, L. Zanotti

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 456 KB

english, 1990

26

Epitaxial growth of GaInP on (111)A and (111)B surfaces by metalorganic chemical vapor deposition

Etsuo Morita, Masao Ikeda, Makoto Inoue, Kunio Kaneko

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 1.05 MB

english, 1990

27

Organometallic vapor phase epitaxial growth of a new quarternary semiconductor alloy Ga1−xInxP1−ySby

M.J. Jou, D.H. Jaw, Z.M. Fang, G.B. Stringfellow

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 1.25 MB

english, 1990

28

Measurements of optical properties of some molten oxides

D.O. Nason, C.T. Yen, W.A. Tiller

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 502 KB

english, 1990

29

Growth of AlxGa1−xAs by reduced pressure MOVPE using trimethylamine alane

A.C. Jones, S.A. Rushworth, D.A. Bohling, G.T. Muhr

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 676 KB

english, 1990

30

GaAs homogeneity region and point defect concentration calculation in ternary systems Ga-As-electrically active impurity

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 1.37 MB

english, 1990

31

Crystal growth in mirror heaters: Time markers by lamp pulses

A.N. Danilewsky, K.W. Benz

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 519 KB

english, 1990

32

Influence of convection on rod spacing of eutectics

R. Caram, S. Chandrasekhar, W.R. Wilcox

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 556 KB

english, 1990

33

Subcell-matched epitaxy of normal long chain compounds on polyethylene: I. on the (110) plane

Takumi Okihara, Akiyoshi Kawaguchi, Masayoshi Ohara, Ken-ichi Katayama

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 1.67 MB

english, 1990

34

Apparent solubilities of two amorphous calcium phosphates and of octacalcium phosphate in the temperature range 30–42°C

M.R. Christoffersen, J. Christoffersen, W. Kibalczyc

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 491 KB

english, 1990

35

The growth and characterization of GaAs single crystal by a modified horizontal bridgman system

T.P. Chen, T.S. Huang, L.J. Chen, Y.D. Guo

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 1012 KB

english, 1990

36

Modeling and optimization of the growth of polycrystalline silicon films by thermal decomposition of silane

G. Peev, L. Zambov, Y. Yanakiev

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 697 KB

english, 1990

37

On the origin of banded microstructure in rapidly solidified alloys: The case of Al-10%Mn quasicrystalline system

K. Chattopadhyay, N.K. Mukhopadhyay

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 591 KB

english, 1990

38

Cellular and dendritic regimes in directional solidification: Microstructural stability diagram

B. Billia, H. Jamgotchian, R. Trivedi

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 1015 KB

english, 1990

39

Vertical gradient freeze growth of ternary GaSb-InSb crystals

J.P. Garandet, T. Duffar, J.J. Favier

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 970 KB

english, 1990

40

DSL photoetching and near infrared phase contrast microscopy on grown-in defects in Si doped LEC GaAs

J.L. Weyher, P.C. Montgomery

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 507 KB

english, 1990

41

7th international conference on vapour growth and epitaxy Nagoya, Japan, 14–17 July 1991

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 68 KB

english, 1990