Surface morphology improvement of GaAs-on-Si using a two-reactor MOCVD system and an AlAs/GaAs low temperature buffer layer: an approach to crack-free GaAs-on-Si
T. Nishimura, K. Kadoiwa, N. Hayafuji, M. Miyashita, K. Mitsui, H. Kumabe, T. MurotaniVolume:
107
Year:
1991
Language:
english
Pages:
5
DOI:
10.1016/0022-0248(91)90504-x
File:
PDF, 285 KB
english, 1991