Heterojonctions Ge p-Si n obtenues par épitaxie sous vide

Heterojonctions Ge p-Si n obtenues par épitaxie sous vide

Pierre Durupt, Jean-Pierre Raynaud, Guy Mesnard
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Volume:
12
Year:
1969
Pages:
5
DOI:
10.1016/0038-1101(69)90076-8
File:
PDF, 349 KB
1969
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