Volume 12; Issue 6

Solid-State Electronics

Volume 12; Issue 6
2

Bulk negative resistance device operated in a relaxation mode

Conrad Lanza, Ralph M. Esposito
Journal:
Solid-State Electronics
Year:
1969
Language:
english
File:
PDF, 4.23 MB
english, 1969
4

Possible application of Au island films as temperature sensor and compensator

E.J. Hsieh, R.Y. Shimoda
Journal:
Solid-State Electronics
Year:
1969
Language:
english
File:
PDF, 155 KB
english, 1969
5

Yellow emission from GaAsP diodes

A.S. Epstein, R.C. Huebner
Journal:
Solid-State Electronics
Year:
1969
Language:
english
File:
PDF, 156 KB
english, 1969
6

Build-up time of an acousto-electric oscillator

S.K. Lahiri, B.R. Nag
Journal:
Solid-State Electronics
Year:
1969
Language:
english
File:
PDF, 343 KB
english, 1969
8

The density of states in degenerate n-type germanium and silicon

Sheng-San Li, Jorge Agraz-G
Journal:
Solid-State Electronics
Year:
1969
Language:
english
File:
PDF, 280 KB
english, 1969
9

Books received

Journal:
Solid-State Electronics
Year:
1969
File:
PDF, 32 KB
1969
11

Thermionic emission of the GaAs photocathode

R.L. Bell
Journal:
Solid-State Electronics
Year:
1969
Language:
english
File:
PDF, 774 KB
english, 1969
12

The solubility of sodium in silicon

E.P. Parry, M.S. Porter, J.O. McCaldin
Journal:
Solid-State Electronics
Year:
1969
Language:
english
File:
PDF, 306 KB
english, 1969
13

Passivation of mesa-type silicon hyperabrupt junction diode

Michihiro Ohta, Tetsuro Nakamura
Journal:
Solid-State Electronics
Year:
1969
Language:
english
File:
PDF, 198 KB
english, 1969