Atomic layer epitaxy of Si using atomic H

Thin Solid Films 1993 Vol. 225; Iss. 1-2

Atomic layer epitaxy of Si using atomic H

Shigeru Imai, Toshio Iizuka, Osamu Sugiura, Masakiyo Matsumura
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Volume:
225
Year:
1993
Language:
english
Pages:
5
DOI:
10.1016/0040-6090(93)90149-j
File:
PDF, 414 KB
english, 1993
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