Volume 225; Issue 1-2

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Thin Solid Films
Volume 225; Issue 1-2

Thin Solid Films

Volume 225; Issue 1-2

1

Editorial Board

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 50 KB

english, 1993

2

Preface

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 83 KB

english, 1993

3

Committee members

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 30 KB

english, 1993

4

Molecular layer epitaxy of GaAs

Jun-ichi Nishizawa, Hiroshi Sakuraba, Yutaka Oyama

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 510 KB

english, 1993

5

A model for the atomic layer epitaxy of GaAs

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 403 KB

english, 1993

6

Study of surface reactions in atomic layer epitaxy of GaAs using trimethylgallium by reflectance difference spectroscopy and mass spectroscopy

B.Y. Maa, P.D. Dapkus

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 348 KB

english, 1993

7

The surface chemistry and kinetics of GaAs atomic layer epitaxy

J.Randall Creighton, Barbara A. Bansenauer

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 858 KB

english, 1993

8

Real-time optical diagnostics for measuring and controlling epitaxial growth

D.E. Aspnes, I. Kamiya, H. Tanaka, R. Bhat, L.T. Florez, J.P. Harbison, W.E. Quinn, M. Tamargo, S. Gregory, M.A.A. Pudensi, S.A. Schwarz, M.J.S.P. Brasil, R.E. Nahory

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 573 KB

english, 1993

9

In situ monitoring and control of atomic layer epitaxy by surface photo-absorption

Naoki Kobayashi, Yasuyuki Kobayashi

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 659 KB

english, 1993

10

In situ optical characterization of GaAs and InP surfaces during chloride atomic layer epitaxy

Kenichi Nishi, Akira Usui, Hiroyuki Sakaki

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 513 KB

english, 1993

11

Study of self-limiting growth mechanism in chloride ALE

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 535 KB

english, 1993

12

The impact of short exposure times on the ALE self-limiting process: potential mechanisms

K.G. Reid, A.F. Myers, N.A. El-Masry, S.M. Bedair

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 418 KB

english, 1993

13

Atomic layer epitaxy of InP using trimethylindium and tertiarybutylphosphine

N. Pan, J. Carter, S. Hein, D. Howe, L. Goldman, L. Kupferberg, S. Brierley, K.C. Hsieh

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 568 KB

english, 1993

14

Laser-assisted atomic layer epitaxy of GaP in chemical beam epitaxy

Masahiro Yoshimoto, Atsushi Kajimoto, Hiroyuki Matsunami

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 285 KB

english, 1993

15

Atomic layer epitaxy of AlAs and (AlAs)n(GaAs)s

M. Ishizaki, N. Kano, J. Yoshino, H. Kukimoto

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 276 KB

english, 1993

16

Conditions for light-induced short-time growth of GaAs and InP by chloride epitaxy

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 315 KB

english, 1993

17

Atomic layer epitaxy for resonant tunneling devices

A.C. Seabaugh, J.H. Luscombe, J.N. Randall, P.C. Colter, A. Dip, G.M. Eldallal, S.M. Bedair

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 448 KB

english, 1993

18

Atomic layer epitaxy of AlAs and AlxGa1xAs for device application

A. Dip, G.M. Eldallal, P.C. Colter, S.M. Bedair

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 404 KB

english, 1993

19

Atomic layer manipulation of III–V compounds

Yoshinobu Aoyagi, Kohji Shinmura, Kiyoshi Kawasaki, Ichirou Nakamoto, Kenji Gamo, Susumu Namba

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 283 KB

english, 1993

20

Digital etching study and fabrication of fine Si lines and dots

Jiro Yamamoto, Takashi Kawasaki, Hiroyuki Sakaue, Shoso Shingubara, Yasuhiro Horiike

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 444 KB

english, 1993

21

Atomic layer epitaxy: chemical opportunities and challenges

Lauri Niinistö, Markku Leskelä

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 517 KB

english, 1993

22

Surface processes in digital etching of GaAs

T. Meguro, M. Ishii, K. Kodama, Y. Yamamoto, K. Gamo, Y. Aoyagi

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 301 KB

english, 1993

23

Comparison of Cl2 and HCl adsorption on Si(100)−(2 × 1)

Q. Gao, C.C. Cheng, P.J. Chen, W.J. Choyke, J.T. Yates Jr.

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 388 KB

english, 1993

24

Hydrogen-halogen chemistry on semiconductor surfaces

Stephen M. Cohen, Terttu I. Hukka, Yuemei L. Yang, Mark P. D'Evelyn

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 413 KB

english, 1993

25

Dopants on Si(100) surfaces: useful probes of silicon atomic layer epitaxy?

S.M. Gates, D.D. Koleske

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 272 KB

english, 1993

26

Atomic layer doping for Si

D.A. Grützmacher, K. Eberl, A.R. Powell, B.A. Ek, T.O. Sedwick, S.S. Iyer

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 438 KB

english, 1993

27

Potential Si atomic layer epitaxy processes using halogenated Si precursors

D.D. Koleske, S.M. Gates, D.B. Beach

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 365 KB

english, 1993

28

Si atomic layer epitaxy based on Si2H6 and remote He plasma bombardment

A. Mahajan, J. Irby, D. Kinosky, R. Qian, S. Thomas, S. Banerjee, A. Tasch, T. Picraux

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 446 KB

english, 1993

29

The chemisorption and reaction of GeCl4 with Si(100)

D.A. Lapiano-Smith, F.R. McFeely

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 328 KB

english, 1993

30

Hydrocarbon surface chemistry on Si(100)

C.C. Cheng, P.A. Taylor, R.M. Wallace, H. Gutleben, L. Clemen, M.L. Colaianni, P.J. Chen, W.H. Weinberg, W.J. Choyke, J.T. Yates Jr.

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 641 KB

english, 1993

31

Novel method for chemical vapor deposition and atomic layer epitaxy using radical chemistry

Terttu I. Hukka, Robin E. Rawles, Mark P. D'Evelyn

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 644 KB

english, 1993

32

Layer-by-layer growth of SiC at low temperatures

J.J. Sumakeris, L.B. Rowland, R.S. Kern, S. Tanaka, R.F. Davis

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 580 KB

english, 1993

33

Atomic layer epitaxy controlled by surface superstructures in SiC

Takashi Fuyuki, Tatsuo Yoshinobu, Hiroyuki Matsunami

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 382 KB

english, 1993

34

Si heterojunction diodes with a thin β-SiC layer prepared with gas layer source molecular beam epitaxy

Kinam Kim, Si-Don Choi, K.L. Wang

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 485 KB

english, 1993

35

Layer-by-layer epitaxial growth of GaN at low temperatures

J. Sumakeris, Z. Sitar, K.S. Ailey-Trent, K.L. More, R.F. Davis

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 511 KB

english, 1993

36

Ultra high vacuum atomic layer epitaxy of CdTe

H. Sitter, W. Faschinger

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 492 KB

english, 1993

37

Self-limiting growth of zinc chalcogenides and their superlattices

M. Konagai, Y. Takemura, K. Yamasaki, K. Takahashi

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 452 KB

english, 1993

38

Growth and characterization of CdTe, HgTe and HgCdTe by atomic layer epitaxy

N.H. Karam, R.G. Wolfson, I.B. Bhat, H. Ehsani, S.K. Ghandhi

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 382 KB

english, 1993

39

Growth and characterization of CdTe-ZnTe short-period superlattices

F. Hauzenberger, W. Faschinger, P. Juza, A. Pesek, K. Lischka, H. Sitter

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 333 KB

english, 1993

40

Self-limiting monolayer epitaxy of wide gap II–VI superlattices

W. Faschinger, P. Juza, S. Ferreira, H. Zajicek, A. Pesek, H. Sitter, K. Lischka

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 374 KB

english, 1993

41

Analytical and chemical techniques in the study of surface species in atomic layer epitaxy

S. Haukka, E.-L. Lakomaa, T. Suntola

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 334 KB

english, 1993

42

Layered tantalum-aluminum oxide films deposited by atomic layer epitaxy

H. Kattelus, M. Ylilammi, J. Saarilahti, J. Antson, S. Lindfors

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 223 KB

english, 1993

43

Subject index of volume 225

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 284 KB

english, 1993

44

Surface photo-absorption study of the laser-assisted atomic layer epitaxial growth process of GaAs

J.P. Simko, T. Meguro, S. Iwai, K. Ozasa, Y. Aoyagi, T. Sugano

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 584 KB

english, 1993

45

Study of photocatalytic growth-rate enhancement in MOMBE of GaAs on ZnSe by surface photoabsorption

Akihiko Yoshikawa, Akiyoshi Iguchi, Shigeki Yamaga

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 332 KB

english, 1993

46

Determining lattice mismatch or the composition of a single ultra thin GaInAs layer grown on InP

Fumiyuki Ohsawa, Hiromasa Fujita, Toshio Obitsu, Hirokazu Ikeda, Hideo Kawanishi

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 401 KB

english, 1993

47

Wavelength dependence of photoenhanced organometallic chemical vapor deposition

J. Salzman, O. Kreinin, E. Maayan

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 356 KB

english, 1993

48

Cost-effective processing by atomic layer epitaxy

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 287 KB

english, 1993

49

Growth and characterization of device quality GaAs produced by laser-assisted atomic layer epitaxy using triethylgallium

Q. Chen, P.D. Dapkus

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 435 KB

english, 1993

50

Group IV atomic layer epitaxy

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 483 KB

english, 1993

51

Atomic H: A reagent for the extraction of chemical species from Si surfaces

John T. Yates Jr., C.C. Cheng, Q. Gao, M.L. Colaianni, W.J. Choyke

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 400 KB

english, 1993

52

Atomic layer epitaxy of Si using atomic H

Shigeru Imai, Toshio Iizuka, Osamu Sugiura, Masakiyo Matsumura

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 414 KB

english, 1993

53

Silicon monolayer growth using dichlorosilane and hydrogen in a near atmospheric pressure chemical vapor deposition reactor

F.G. McIntosh, P.C. Colter, S.M. Bedair

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 354 KB

english, 1993

54

Si2H6 adsorption and dissociation pathways on Ge(001)2 ×1: mechanisms for heterogeneous atomic layer epitaxy

R. Tsu, D. Lubben, T.R. Bramblett, J.E. Greene

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 436 KB

english, 1993

55

Chemistry of hydrogen on diamond (100)

Yuemei L. Yang, Lisa M. Struck, Leyla F. Sutcu, Mark P. D'Evelyn

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 769 KB

english, 1993

56

Atomic level epitaxy of 3C-SiC by low pressure vapour deposition with alternating gas supply

H. Nagasawa, Y. Yamaguchi

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 551 KB

english, 1993

57

Microscopic mechanisms of accurate layer-by-layer growth of β-SiC

Shiro Hara, T. Meguro, Y. Aoyagi, M. Kawai, S. Misawa, E. Sakuma, S. Yoshida

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 364 KB

english, 1993

58

Atomic layer control of the growth of oxide superconductors using laser molecular beam epitaxy

Hitoshi Tabata, Tomoji Kawai

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 348 KB

english, 1993

59

Self-limiting adsorption and in situ optical monitoring for atomic layer epitaxy of oxide superconductors layer epitaxy of oxide superconductors

S. Oda, H. Zama, K. Fujii, K. Sakai, Y.C. Chen

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 335 KB

english, 1993

60

Growth of titanium dioxide thin films by atomic layer epitaxy

Mikko Ritala, Markku Leskelä, Erja Nykänen, Pekka Soininen, Lauri Niinistö

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 745 KB

english, 1993

61

Author index of volume 225

Journal:

Thin Solid Films

Year:

1993

File:

PDF, 63 KB

1993

62

GaAs/AlGaAs atomic layer epitaxy in a commercial MOCVD reactor

H. Liu, P.A. Zawadzki, P.E. Norris

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 286 KB

english, 1993

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