Study of growth kinetics in silicon gas source molecular...

Thin Solid Films 1993 Vol. 228; Iss. 1-2

Study of growth kinetics in silicon gas source molecular beam epitaxy with disilane using RHEED intensity oscillations

S. Butzke, K. Werner, J. Trommel, S. Radelaar, P. Balk
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Volume:
228
Year:
1993
Language:
english
Pages:
5
DOI:
10.1016/0040-6090(93)90556-5
File:
PDF, 431 KB
english, 1993
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