![](/img/cover-not-exists.png)
Comparison of resonant tunneling currents in double gate MOS diodes with metal and poly-silicon gates
Bogdan MajkusiakVolume:
72
Year:
2004
Language:
english
Pages:
5
DOI:
10.1016/j.mee.2003.12.023
File:
PDF, 212 KB
english, 2004