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Deep hole trapping effects in the degradation mechanisms of 6.5–2 nm thick gate-oxide PMOSFETs
A Bravaix, D Goguenheim, N Revil, E VincentVolume:
72
Year:
2004
Language:
english
Pages:
6
DOI:
10.1016/j.mee.2003.12.025
File:
PDF, 255 KB
english, 2004