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Consistent model for the voltage and temperature dependence of the soft breakdown conduction mechanism in ultrathin gate oxides
A Avellán, E Miranda, D Schroeder, W KrautschneiderVolume:
72
Year:
2004
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2003.12.029
File:
PDF, 302 KB
english, 2004