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Analysis of the electron traps at the 4H-SiC/SiO2 interface using combined CV/thermally stimulated current measurements
T.E. Rudenko, H.Ö. Ólafsson, E.Ö. Sveinbjörnsson, I.P. Osiyuk, I.P. TyagulskiVolume:
72
Year:
2004
Language:
english
Pages:
5
DOI:
10.1016/j.mee.2003.12.039
File:
PDF, 233 KB
english, 2004