Analysis of the electron traps at the 4H-SiC/SiO2 interface...

Microelectronic Engineering 2004 Vol. 72; Iss. 1-4

Analysis of the electron traps at the 4H-SiC/SiO2 interface using combined CV/thermally stimulated current measurements

T.E. Rudenko, H.Ö. Ólafsson, E.Ö. Sveinbjörnsson, I.P. Osiyuk, I.P. Tyagulski
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
72
Year:
2004
Language:
english
Pages:
5
DOI:
10.1016/j.mee.2003.12.039
File:
PDF, 233 KB
english, 2004
Conversion to is in progress
Conversion to is failed