A double-layer current conduction model for high-κ gate...

Microelectronic Engineering 2006 Vol. 83; Iss. 10

A double-layer current conduction model for high-κ gate dielectric materials with interfacial oxide or silicate layer

V. Filip, H. Wong, B. Sen, D. Nicolaescu, C.K. Sarkar
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Volume:
83
Year:
2006
Language:
english
Pages:
7
DOI:
10.1016/j.mee.2006.01.137
File:
PDF, 254 KB
english, 2006
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