![](/img/cover-not-exists.png)
Source/drain extension region engineering in nanoscale double gate SOI MOSFETs: Novel design methodology for low-voltage analog applications
Abhinav Kranti, G. Alastair ArmstrongVolume:
84
Year:
2007
Language:
english
Pages:
10
DOI:
10.1016/j.mee.2007.01.157
File:
PDF, 273 KB
english, 2007