Positive charge generation due to species of hydrogen during NBTI phenomenon in pMOSFETs with ultra-thin SiON gate dielectrics
Shimpei Tsujikawa, Jiro YugamiVolume:
45
Year:
2005
Language:
english
Pages:
5
DOI:
10.1016/j.microrel.2004.03.018
File:
PDF, 323 KB
english, 2005