Impact of inside spacer process on fully self-aligned...

Microelectronics Reliability 2008 / 8 Vol. 48; Iss. 8-9

Impact of inside spacer process on fully self-aligned 250GHz SiGe:C HBTs reliability performances: a-Si vs. nitride

Diop, M., Revil, N., Marin, M., Monsieur, F., Chevalier, P., Ghibaudo, G.
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Volume:
48
Language:
english
Pages:
4
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2008.06.045
Date:
August, 2008
File:
PDF, 309 KB
english, 2008
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