Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques
Bouya, M., Malbert, N., Labat, N., Carisetti, D., Perdu, P., Clément, J.C., Lambert, B., Bonnet, M.Volume:
48
Language:
english
Pages:
4
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2008.07.052
Date:
August, 2008
File:
PDF, 282 KB
english, 2008