Cross-cell interference variability aware model of fully...

Microelectronics Reliability 2011 Vol. 51; Iss. 5

Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness

Pavel Poliakov, Pieter Blomme, Miguel Miranda Corbalan, Jan Van Houdt, Wim Dehaene
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Volume:
51
Year:
2011
Language:
english
Pages:
6
DOI:
10.1016/j.microrel.2010.12.010
File:
PDF, 1.34 MB
english, 2011
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