Volume 51; Issue 5

Microelectronics Reliability

Volume 51; Issue 5

1

Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors

Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet, Kenji Ohmori, Kenji Natori, Keisaku Yamada, Hiroshi Iwai

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 1.27 MB

english, 2011

2

Thermal stability of SiC Schottky diode anode and cathode metalisations after 1000 h at 350 °C

Donagh O’Mahony, Russell Duane, Tony Campagno, Liam Lewis, Nicolas Cordero, Pleun Maaskant, Finbarr Waldron, Brian Corbett

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 895 KB

english, 2011

3

Self-consistent design issues for high frequency Cu interconnect reliability incorporating skin effect

Ming Yao, Xuliang Zhang, Chaoyang Zhao, Jianguo Ma

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 777 KB

english, 2011

4

The sensitivity of radiation-induced leakage to STI topology and sidewall doping

Nadia Rezzak, Michael L. Alles, Ronald D. Schrimpf, Sarah Kalemeris, Lloyd W. Massengill, John Sochacki, Hugh J. Barnaby

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 1.10 MB

english, 2011

5

Material property effects on solder failure analyses

Yeong K. Kim, Jin Hyuk Gang, Bo-Young Lee

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 1.15 MB

english, 2011

6

Electrothermomechanical analysis of partially insulated field-effect transistors using hybrid nonlinear finite element method

Ming Yi, Wen-Yan Yin

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 1.92 MB

english, 2011

7

Investigation of the heel crack mechanism in Al connections for power electronics modules

Y. Celnikier, L. Benabou, L. Dupont, G. Coquery

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 1.82 MB

english, 2011

8

Luminescence properties of mechanically nanoindented ZnSe

Wei-Hung Yau, Pai-Chung Tseng, Hua-Chiang Wen, Chien-Huang Tsai, Wu-Ching Chou

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 751 KB

english, 2011

9

Facetting of the self-assembled droplet epitaxial GaAs quantum dot

Ákos Nemcsics, Lajos Tóth, László Dobos, Andrea Stemmann

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 708 KB

english, 2011

10

Integration of analytical techniques in stochastic optimization of microsystem reliability

Xiangdong Xue, Chris Bailey, Hua Lu, Stoyan Stoyanov

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 665 KB

english, 2011

11

Creep behaviour of Sn–3.8Ag–0.7Cu under the effect of electromigration: Experiments and modelling

Fei Su, Ronghai Mao, Xiaoyan Wang, Guangzhou Wang, Haiyan Pan

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 469 KB

english, 2011

12

An investigation of reliability of solder joints in microelectronic packages by high temperature moiré method

Haixia Shang, Jianxin Gao, P. Ian Nicholson, Steve Kenny

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 1.56 MB

english, 2011

13

Design to suppress return-back leakage current of charge pump circuit in low-voltage CMOS process

Yi-Hsin Weng, Hui-Wen Tsai, Ming-Dou Ker

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 1.40 MB

english, 2011

14

Analysis of interconnect capacitance for sub nano CMOS technology using the low dielectric material

Bhavana N. Joshi, Yogesh S. Mhaisagar, Ashok M. Mahajan

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 1.10 MB

english, 2011

15

Inside front cover - Editorial board

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 37 KB

english, 2011

16

Modeling of enhancement factor of hole mobility for strained silicon under low stress intensity

Hongxia Liu, Shulong Wang, Yue Hao

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 484 KB

english, 2011

17

Mechanical behavior of solder joints under dynamic four-point impact bending

Tong An, Fei Qin, Jiangang Li

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 1.16 MB

english, 2011

18

Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness

Pavel Poliakov, Pieter Blomme, Miguel Miranda Corbalan, Jan Van Houdt, Wim Dehaene

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 1.34 MB

english, 2011

19

NBTI reliability on high-k metal-gate SiGe transistor and circuit performances

Jiann-Shiun Yuan, Wen-Kuan Yeh, Shuyu Chen, Chia-Wei Hsu

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 519 KB

english, 2011

20

Temperature and voltage aging effects on electrical conduction mechanism in epoxy-BaTiO3 composite dielectric used in embedded capacitors

Mohammed A. Alam, Michael H. Azarian, Michael Osterman, Michael Pecht

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 706 KB

english, 2011

21

Transient current mechanism of lead zirconate titanate capacitors sputtered on La0.65Sr0.35MnO3

Mingzhi Dai, Mingming Li, Guodong Wu, Li Li, Huang Jin

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 330 KB

english, 2011

22

Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs

Kiichi Tachi, Sylvain Barraud, Kuniyuki Kakushima, Hiroshi Iwai, Sorin Cristoloveanu, Thomas Ernst

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 514 KB

english, 2011

23

Microstructure, thermal analysis and hardness of a Sn–Ag–Cu–1 wt% nano-TiO2 composite solder on flexible ball grid array substrates

Asit Kumar Gain, Y.C. Chan, Winco K.C. Yung

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 2.82 MB

english, 2011

24

A 0.18 μm CMOS linear-in-dB AGC post-amplifier for optical communications

Francisco Aznar, Santiago Celma, Belén Calvo

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 969 KB

english, 2011