NBTI reliability on high-k metal-gate SiGe transistor and...

Microelectronics Reliability 2011 Vol. 51; Iss. 5

NBTI reliability on high-k metal-gate SiGe transistor and circuit performances

Jiann-Shiun Yuan, Wen-Kuan Yeh, Shuyu Chen, Chia-Wei Hsu
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Volume:
51
Year:
2011
Language:
english
Pages:
5
DOI:
10.1016/j.microrel.2010.12.015
File:
PDF, 519 KB
english, 2011
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