β-FeSi2 based metal-insulator-semiconductor devices formed by sputtering for optoelectronic applications
Teruhisa Ootsuka, Zhengxin Liu, Masato Osamura, Yasuhiro Fukuzawa, Naotaka Otogawa, Yasuhiko Nakayama, Hisao Tanoue, Yunosuke MakitaVolume:
124-125
Year:
2005
Language:
english
Pages:
4
DOI:
10.1016/j.mseb.2005.08.043
File:
PDF, 187 KB
english, 2005