Fabrication of 100 nm gate length MOSFET's using a...

Materials Science and Engineering: B 2005 Vol. 124-125; Iss. none

Fabrication of 100 nm gate length MOSFET's using a novel carbon nanotube-based nano-lithography

J. Derakhshandeh, Y. Abdi, S. Mohajerzadeh, H. Hosseinzadegan, E. Asl. Soleimani, H. Radamson
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Volume:
124-125
Year:
2005
Language:
english
Pages:
5
DOI:
10.1016/j.mseb.2005.08.126
File:
PDF, 292 KB
english, 2005
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