Drivability improvement in Schottky barrier source/drain...

Solid-State Electronics 2006 Vol. 50; Iss. 7-8

Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction

Shiyang Zhu, M.F. Li
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Volume:
50
Year:
2006
Language:
english
Pages:
4
DOI:
10.1016/j.sse.2006.05.023
File:
PDF, 316 KB
english, 2006
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