In-depth electrical characterization of sub-45 nm fully depleted strained SOI MOSFETs with TiN/HfO2 gate stack
S. Feruglio, F. Andrieu, O. Faynot, G. GhibaudoVolume:
52
Year:
2008
Language:
english
Pages:
9
DOI:
10.1016/j.sse.2007.10.039
File:
PDF, 1.85 MB
english, 2008