Volume 52; Issue 4

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Solid-State Electronics
Volume 52; Issue 4

Solid-State Electronics

Volume 52; Issue 4

1

Impact of channel orientation on ballistic current of nDGFETs with alternative channel materials

Quentin Rafhay, Raphaël Clerc, Marlène Ferrier, Georges Pananakakis, Gérard Ghibaudo

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 389 KB

english, 2008

2

Theoretical foundations of the quantum drift-diffusion and density-gradient models

Giorgio Baccarani, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Massimo Rudan

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 340 KB

english, 2008

3

Mobility in graphene double gate field effect transistors

M.C. Lemme, T.J. Echtermeyer, M. Baus, B.N. Szafranek, J. Bolten, M. Schmidt, T. Wahlbrink, H. Kurz

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 495 KB

english, 2008

4

Foreword

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 60 KB

english, 2008

5

Foreword

Youri V. Ponomarev

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 60 KB

english, 2008

6

Writing current reduction and total set resistance analysis in PRAM

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 799 KB

english, 2008

7

Performance and reliability of HfAlOx-based interpoly dielectrics for floating-gate Flash memory

B. Govoreanu, D. Wellekens, L. Haspeslagh, D.P. Brunco, J. De Vos, D. Ruiz Aguado, P. Blomme, K. van der Zanden, J. Van Houdt

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 229 KB

english, 2008

8

Charge cross talk in sub-lithographically shrinked 32 nm Twin Flash™ memory cells

M.F. Beug, R. Knöfler, C. Ludwig, R. Hagenbeck, T. Müller, S. Riedel, T. Höhr, J.-U. Sachse, N. Nagel, T. Mikolajick, K.-H. Küsters

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 657 KB

english, 2008

9

Editorial Board

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 1.49 MB

english, 2008

10

Novel concepts for improved communication between nerve cells and silicon electronic devices

Roeland Huys, Dries Braeken, Bart Van Meerbergen, Kurt Winters, Wolfgang Eberle, Josine Loo, Diana Tsvetanova, Chang Chen, Simone Severi, S. Yitzchaik, M. Spira, J. Shappir, Geert Callewaert, Gustaaf

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 548 KB

english, 2008

11

On the electron mobility enhancement in biaxially strained Si MOSFETs

F. Driussi, D. Esseni, L. Selmi, P.-E. Hellström, G. Malm, J. Ha˚llstedt, M. Östling, T.J. Grasby, D.R. Leadley, X. Mescot

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 203 KB

english, 2008

12

Monte-Carlo simulation of MOSFETs with band offsets in the source and drain

M. Braccioli, P. Palestri, M. Mouis, T. Poiroux, M. Vinet, G. Le Carval, C. Fiegna, E. Sangiorgi, S. Deleonibus

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 198 KB

english, 2008

13

In-depth electrical characterization of sub-45 nm fully depleted strained SOI MOSFETs with TiN/HfO2 gate stack

S. Feruglio, F. Andrieu, O. Faynot, G. Ghibaudo

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 1.85 MB

english, 2008

14

3D nanowire gate-all-around transistors: Specific integration and electrical features

C. Dupré, T. Ernst, V. Maffini-Alvaro, V. Delaye, J.-M. Hartmann, S. Borel, C. Vizioz, O. Faynot, G. Ghibaudo, S. Deleonibus

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 795 KB

english, 2008

15

Use of Al2O3 as inter-poly dielectric in a production proven 130 nm embedded Flash technology

R. Kakoschke, L. Pescini, J.R. Power, K. van der Zanden, E.-O. Andersen, Y. Gong, R. Allinger

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 752 KB

english, 2008

16

Physical understanding and modeling of SANOS retention in programmed state

Arnaud Furnémont, Antonio Cacciato, Laurent Breuil, Maarten Rosmeulen, Herman Maes, Kristin De Meyer, Jan Van Houdt

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 1006 KB

english, 2008

17

Explanation of programming distributions in phase-change memory arrays based on crystallization time statistics

D. Mantegazza, D. Ielmini, A. Pirovano, A.L. Lacaita, E. Varesi, F. Pellizzer, R. Bez

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 493 KB

english, 2008

18

Multi-layer high-κ interpoly dielectric for floating gate flash memory devices

Lu Zhang, Wei He, Daniel S.H. Chan, Byung Jin Cho

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 449 KB

english, 2008

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