Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric
C.X. Li, C.H. Leung, P.T. Lai, J.P. XuVolume:
54
Year:
2010
Language:
english
Pages:
5
DOI:
10.1016/j.sse.2010.03.002
File:
PDF, 517 KB
english, 2010