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Volume 54; Issue 7
Main
Solid-State Electronics
Volume 54; Issue 7
Solid-State Electronics
Volume 54; Issue 7
1
Ni–Au contacts to p-type GaN – Structure and properties
Julita Smalc-Koziorowska
,
Szymon Grzanka
,
Elżbieta Litwin-Staszewska
,
Ryszard Piotrzkowski
,
Grzegorz Nowak
,
Michał Leszczynski
,
Piotr Perlin
,
Ewa Talik
,
Jan Kozubowski
,
Stanisław Krukowski
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 1.82 MB
Your tags:
english, 2010
2
High voltage REBULF LDMOS with N+ buried layer
Baoxing Duan
,
Yintang Yang
,
Bo Zhang
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 886 KB
Your tags:
english, 2010
3
Extracting the Schottky barrier height from axial contacts to semiconductor nanowires
K. Sarpatwari
,
N.S. Dellas
,
O.O. Awadelkarim
,
S.E. Mohney
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 862 KB
Your tags:
english, 2010
4
Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric
K. Kakushima
,
T. Koyanagi
,
K. Tachi
,
J. Song
,
P. Ahmet
,
K. Tsutsui
,
N. Sugii
,
T. Hattori
,
H. Iwai
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 333 KB
Your tags:
english, 2010
5
Ambient temperature characteristics of Schottky contacts on 4H–SiC aged in air at 350 °C
Adetayo V. Adedeji
,
Ayayi C. Ahyi
,
John R. Williams
,
Suzanne E. Mohney
,
James D. Scofield
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 742 KB
Your tags:
english, 2010
6
On the piezoelectric coupling constant of epitaxial Mg-doped GaN
X. Xu
,
R.C. Woods
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 323 KB
Your tags:
english, 2010
7
Low-resistivity Ni/Pt Ohmic contacts to p-type N-doped ZnO
Y.F. Lu
,
Z.Z. Ye
,
Y.J. Zeng
,
L.P. Zhu
,
J.Y. Huang
,
B.H. Zhao
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 427 KB
Your tags:
english, 2010
8
Effects of thermal annealing on structure, morphology and electrical properties of F16CuPc/α6T heterojunction thin films
Rongbin Ye
,
Mamoru Baba
,
Koji Ohta
,
Kazunori Suzuki
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 922 KB
Your tags:
english, 2010
9
Editorial Board
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 66 KB
Your tags:
english, 2010
10
Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric
C.X. Li
,
C.H. Leung
,
P.T. Lai
,
J.P. Xu
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 517 KB
Your tags:
english, 2010
11
Formation of 30-V power DMOSFET’s by implementing p-counter-doped region within n-type drift layer
Miin-Horng Juang
,
C.C. Hwang
,
D.C. Shye
,
J.L. Wang
,
S.L. Jang
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 569 KB
Your tags:
english, 2010
12
Interface and electrical properties of La-silicate for direct contact of high-k with silicon
K. Kakushima
,
K. Tachi
,
M. Adachi
,
K. Okamoto
,
S. Sato
,
J. Song
,
T. Kawanago
,
P. Ahmet
,
K. Tsutsui
,
N. Sugii
,
T. Hattori
,
H. Iwai
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 576 KB
Your tags:
english, 2010
13
Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design
Anwar Jarndal
,
Pouya Aflaki
,
Louay Degachi
,
Ahmed Birafane
,
Ammar Kouki
,
Renato Negra
,
Fadhel M. Ghannouchi
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 942 KB
Your tags:
english, 2010
14
The direct evidence of substrate potential propagation in a gate-grounded NMOS
Dao-Hong Yang
,
Jone F. Chen
,
Kuo-Ming Wu
,
J.R. Shih
,
Jian-Hsing Lee
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 721 KB
Your tags:
english, 2010
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