Strain relaxation processes in strained-Si layer on SiGe-on-insulator substrates
Norio Hirashita, Naoharu Sugiyama, Eiji Toyoda, Shin-ichi TakagiVolume:
508
Year:
2006
Language:
english
Pages:
5
DOI:
10.1016/j.tsf.2005.08.398
File:
PDF, 295 KB
english, 2006