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Study of CVD high-k gate oxides on high-mobility Ge and Ge/Si substrates
S. Van Elshocht, M. Caymax, T. Conard, S. De Gendt, I. Hoflijk, M. Houssa, F. Leys, R. Bonzom, B. De Jaeger, J. Van Steenbergen, W. Vandervorst, M. Heyns, M. MeurisVolume:
508
Year:
2006
Language:
english
Pages:
5
DOI:
10.1016/j.tsf.2005.08.406
File:
PDF, 214 KB
english, 2006