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Indium surface segregation during chemical beam epitaxy of Ga1 − xInxAsGaAs and Ga1 − xInxPGaAs heterostructures
M. Mesrine, J. Massies, C. Deparis, N. Grandjean, E. Vanelle, M. LerouxVolume:
175-176
Year:
1997
Language:
english
Pages:
5
DOI:
10.1016/s0022-0248(96)00919-0
File:
PDF, 406 KB
english, 1997