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MBE growth of double-sided doped InAlAsInGaAs HEMTs with an InAs layer inserted in the channel
M. Sexl, G. Böhm, D. Xu, H. Heiß, S. Kraus, G. Tränkle, G. WeimannVolume:
175-176
Year:
1997
Language:
english
Pages:
4
DOI:
10.1016/s0022-0248(96)01203-1
File:
PDF, 298 KB
english, 1997