![](/img/cover-not-exists.png)
On the correlation between radiation-induced oxide- and border-trap effects in the gate-oxide nMOSFET’s
Boualem DjezzarVolume:
42
Year:
2002
Language:
english
Pages:
10
DOI:
10.1016/s0026-2714(02)00242-1
File:
PDF, 449 KB
english, 2002