A novel method for extraction of VDMOSFET model parameters...

Microelectronics Reliability 1998 Vol. 38; Iss. 3

A novel method for extraction of VDMOSFET model parameters using neural networks

T. Trajković, P. Igić, N. Stojadinović
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Volume:
38
Year:
1998
Language:
english
Pages:
5
DOI:
10.1016/s0026-2714(97)00177-7
File:
PDF, 255 KB
english, 1998
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