Experimental study of the quasi-breakdown failure mechanism...

Microelectronics Reliability 1999 Vol. 39; Iss. 2

Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides

D. Goguenheim, A. Bravaix, D. Vuillaume, F. Mondon, Ph. Candelier, M. Jourdain, A. Meinertzhagen
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Volume:
39
Year:
1999
Language:
english
Pages:
5
DOI:
10.1016/s0026-2714(98)00215-7
File:
PDF, 362 KB
english, 1999
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