A new method to extract diode parameters under the presence...

Microelectronics Reliability 2000 Vol. 40; Iss. 2

A new method to extract diode parameters under the presence of parasitic series and shunt resistance

J.C Ranuárez, A Ortiz-Conde, F.J Garcı́a Sánchez
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Volume:
40
Year:
2000
Language:
english
Pages:
4
DOI:
10.1016/s0026-2714(99)00232-2
File:
PDF, 147 KB
english, 2000
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